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MOCVD growth

Feng's abstract is accepted as a late news abstract of the 58th Electronic Materials Conference (EMC) in Newark, DE, USA

1 min read · Wed, Jun 22 2016

News

MOCVD growth

Feng's abstract is accepted as a late news abstract of the 58th Electronic Materials Conference (EMC) in Newark, DE, USA

The first MOCVD growth in Middle East is conducted today in our lab!

1 min read · Mon, Sep 10 2018

News

MOCVD growth

The first MOCVD growth in Middle East is conducted today in our lab!

Feng Wu

Visiting Student, Advanced Semiconductor Laboratory

MOCVD growth fabrication of deep UV LED

Feng Wu was a Visting Ph.D. student from Huazhong University of Science and Technology (HUST)​​, at the Advanced Semiconductor Laboratory, in King Abdullah University of Science and Technology (KAUST). Feng Wu received his Bachelor's degree in optical information science and engineering from Huazhong University of Science and Technology, Wuhan, China, on June 2012. Currently, he is a Ph.D. student at Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology. Research Interest Feng's research interests included MOCVD growth, characterization of III-nitride

Rolf Krause Research Group (R-Krause)

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